TERACT · HyperGate V40
Product view for preliminary evaluation. It summarizes the functional gate stack scheme, expected metrics and the proposed experimental path without disclosing exact thicknesses, reserved geometries or confidential values.
Stack scheme
The approach separates interface, isolation and electrostatic coupling functions to improve the balance between leakage and channel control.
Conductive element integrated into a gate stack compatible with advanced manufacturing flows.
Dielectric oriented to preserve effective capacitance without pushing the system into excessive leakage penalty.
Region designed to modulate the trade-off between electrostatic control, interfacial stability and tunneling behavior.
Transistor environment where interfacial quality and the gate stack determine overall electrical response.
Expected KPIs
The following indicators represent expected technical goals and must be verified through test wafer, C-V/I-V and comparison against reference structures.
Lower gate leakage under conditions relevant to advanced nodes.
More robust effective capacitance and interfacial behavior under scaling.
Better balance between performance, standby consumption and thermal budget.
Expanded experimental path
Expanded validation is posed as a staged path to separate architectural effect, process variation and real electrical behavior.
Fabrication of experimental structures and reference lots over a controlled process window.
Characterization of effective capacitance, electrostatic response and the gate / dielectric / channel interface.
Measurement of leakage current, standby response and electrical behavior under operating biases.
Statistical comparison against traditional stacks to evaluate improvement, dispersion and robustness.
Next step
Discussion of reserved parameters, foundry integration or deeper review is handled through direct request and, when applicable, under NDA.